NoMIS Power has introduced two new medium-voltage silicon carbide (SiC) MOSFETs, marking a significant expansion into higher voltage classes with its first 1.7 kV device. These components are engineered for demanding applications across grid infrastructure, rail and heavy-duty electrification, industrial drives, and marine systems, promising improved efficiency and higher frequency operation.
Introducing Next-Generation SiC MOSFETs
The newly launched devices include the N3PT035MP330K, a 3.3 kV MOSFET with a resistance of 35 mΩ and a current rating of 88 A, and the N3PT100MP170K, a 1.7 kV MOSFET offering 100 mΩ resistance and 24 A current capacity. Both are available for sampling in TO-247-4L packages or as bare die, allowing for flexible integration into various power electronic designs.
These new parts are built upon NoMIS Power’s advanced planar SiC platform. This technology is designed to extend the high performance already demonstrated in the company’s 1.2 kV MOSFETs into the higher 1.7 kV and 3.3 kV voltage ranges. The enhancement aims to deliver greater efficiency and enable operation at higher switching frequencies, crucial for modern power conversion systems.
Bridging Voltage Gaps in Power Electronics
The introduction of the 1.7 kV MOSFET is particularly noteworthy. NoMIS Power positions this device as a crucial “bridge” component. It connects established 1.2 kV designs with emerging 3.3 kV architectures, facilitating the creation of highly efficient power stages. These stages are well-suited for DC buses operating around the 1.0 kV class, finding applications in areas such as traction auxiliary systems, charging subsystems for electric vehicles, and various industrial power supplies.
This new offering addresses a key gap in the market, providing a pathway for engineers to upgrade existing designs or develop new systems that require a step up in voltage handling without compromising efficiency or reliability. The ability to operate effectively at these medium voltage levels opens up new possibilities for system miniaturization and performance enhancement.
Key Performance Enhancements
NoMIS Power has highlighted several key performance advantages of its new SiC MOSFETs. A critical feature is their ability to operate at junction temperatures up to 175°C. This high-temperature capability enhances reliability and allows for more compact thermal management solutions.
The devices also offer compatibility with standard gate drive voltages, operating with both +18 V and +20 V gate-drive signals. This broad compatibility simplifies integration with existing gate driver circuitry. Furthermore, the new MOSFETs exhibit improved ruggedness, characterized by higher dv/dt capability. This means they can withstand faster voltage transitions without negative impact, a crucial factor in high-switching-frequency applications.
The company also emphasized the improved efficiency-ruggedness trade-off. This means designers can achieve higher electrical efficiency while maintaining the robustness and reliability required for challenging applications. Such advancements are vital for reducing energy losses and extending the operational lifespan of power electronic systems.
Strategic Vision and Market Impact
Adam Morgan, co-founder and CEO of NoMIS Power, commented on the significance of the new product line. “This is our first 1.7 kV offering—an important transitory node that bridges established 1.2 kV designs to 3.3 kV architectures,” he stated. This underscores the company’s strategic intent to provide solutions that facilitate evolutionary upgrades in power electronics, rather than requiring complete redesigns.
The expansion into medium-voltage SiC MOSFETs aligns with the growing demand for high-performance power semiconductor solutions across multiple industries. The electrification of transportation, including heavy-duty vehicles and rail, requires robust and efficient power converters. Similarly, grid infrastructure and industrial automation are increasingly adopting advanced power electronics to improve energy management and operational efficiency.
Silicon carbide technology has become a key enabler for these advancements, offering superior performance characteristics compared to traditional silicon-based devices, such as lower on-resistance, faster switching speeds, and higher thermal conductivity. NoMIS Power’s continued innovation in this area positions them as a significant player in the evolving landscape of EV power electronics and beyond.
The availability of these new SiC MOSFETs is expected to empower engineers to design more compact, efficient, and reliable power conversion systems for a wide range of medium-voltage applications, driving further progress in electrification and industrial innovation.