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In a significant development for the automotive industry, Diodes Incorporated has announced the expansion of its automotive-compliant PowerDI8080-5 MOSFET lineup. The company has introduced a new 100 V N-channel device, which it states offers industry-leading on-resistance crucial for the evolving landscape of 48 V automotive designs and the broader spectrum of EV power electronics.

This latest addition, designated DMTH10H1M7SPGWQ, boasts a maximum RDS(on) of merely 1.5 mΩ. Such a low on-resistance is a critical parameter for power efficiency, particularly in high-current applications within electric vehicles and advanced conventional automobiles.

Revolutionising 48V Automotive Systems

The new 100 V MOSFET is specifically engineered to address the demanding requirements of 48 V BLDC (Brushless DC) motor drives. These systems are increasingly integral to modern vehicles, powering essential functions such as electric power steering and advanced braking systems, where precise control and high efficiency are paramount.

Beyond motor drives, the device also finds crucial application in battery disconnect switches, which play a vital role in vehicle safety and power management. Furthermore, its capabilities extend to onboard chargers (OBCs), a cornerstone component in the charging infrastructure of electric vehicles, where minimal power loss translates directly to faster and more efficient charging cycles.

Expanding the Portfolio: Versatility Across Voltage Rails

Concurrent with the 100 V introduction, Diodes Incorporated has also broadened its PowerDI8080-5 portfolio with additional 40 V, 60 V, and 80 V devices. These new offerings share the same compact 8 mm x 8 mm gullwing-leaded package, ensuring a consistent design footprint across various automotive applications.

Among these new devices is a 40 V part that features an exceptionally low 0.4 mΩ maximum RDS(on). This particular specification is highlighted by Diodes as among the lowest in the industry, underscoring the company’s commitment to pushing the boundaries of power efficiency in automotive semiconductors, a key factor in advancing EV power electronics.

The expanded lineup provides robust solutions for a range of automotive power domains. The 80 V DMTH81M2SPGWQ caters to medium-voltage applications, while the 60 V DMTH6M70SPGWQ is optimised for 24 V systems commonly found in commercial vehicles and certain automotive subsystems.

Additionally, the new 40 V parts are designed for crucial 12 V motor drives, DC-DC conversion units, and microcontroller-driven automotive loads. This comprehensive offering ensures that designers have access to high-performance, compact solutions for virtually every voltage rail within a modern vehicle architecture.

The PowerDI8080-5 Package: A Leap in Design and Performance

A significant highlight of Diodes’ latest offerings is the innovative PowerDI8080-5 package itself, which represents a crucial advancement in power semiconductor packaging. The package’s compact 64 mm² footprint is approximately 40% smaller than that of a conventional TO-263 (D2PAK) package, making it an ideal choice for space-constrained automotive designs where every millimetre counts.

Moreover, with a low profile of just 1.7 mm, the PowerDI8080-5 package facilitates sleeker, more integrated power modules. This miniaturisation is vital for integrating complex EV power electronics into increasingly compact vehicle designs without compromising performance or thermal management.

Thermal efficiency is further enhanced through copper-clip die bonding technology employed within the package. This advanced bonding method significantly reduces the junction-to-case thermal resistance to an impressive low of 0.3 °C/W. Such superior thermal performance allows the MOSFETs to handle substantial drain currents, up to 847 A, ensuring reliability and longevity even under high-stress operating conditions inherent in automotive applications.

The package’s gullwing leads offer additional benefits, particularly in manufacturing and long-term reliability. These leads are designed to support automated optical inspection (AOI), streamlining the manufacturing process and ensuring higher quality control. Furthermore, their unique structure contributes to improved temperature-cycling reliability, an essential characteristic for components operating in the harsh and variable thermal environments of an automobile.

Commitment to Automotive Excellence and Reliability

Diodes Incorporated underscores its dedication to the stringent demands of the automotive sector by ensuring that these new devices are AEC-qualified. This qualification signifies that the MOSFETs meet the Automotive Electronics Council’s rigorous standards for reliability and quality, essential for components deployed in vehicle systems where failure can have significant consequences.

Furthermore, the production of these advanced MOSFETs takes place in facilities that are IATF 16949-certified. This certification represents the highest global standard for quality management systems in the automotive industry, ensuring that Diodes Incorporated maintains robust processes and controls throughout the design and manufacturing lifecycle.

This dual commitment to AEC qualification and IATF 16949 certification provides automotive manufacturers with confidence in the performance, durability, and safety of Diodes’ components, critical attributes for the reliability of all EV power electronics.

The Broader Impact on EV Engineering

The introduction of these high-performance, compact MOSFETs by Diodes Incorporated marks a significant step forward in the evolution of EV power electronics. As electric vehicles continue to gain market traction, the demand for more efficient, smaller, and highly reliable power management solutions intensifies.

These new devices cater directly to these needs, enabling advancements in critical areas such as vehicle electrification, energy conversion, and motor control. By offering industry-leading on-resistance and superior thermal characteristics in a space-saving package, Diodes is empowering designers to create more efficient, compact, and robust automotive systems for the next generation of electric and hybrid vehicles.

The continuous innovation in semiconductor technology, exemplified by these new MOSFETs, is crucial for improving the range, performance, and overall user experience of electric vehicles, driving the industry towards a more sustainable and electrified future. The focus on high-performance, compact solutions underscores the ongoing drive to optimise every aspect of EV power electronics to meet escalating demands.

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