Key Takeaways: ROHM’s New 650 V IGBTs for EVs
- ROHM has launched its 4th-generation 650 V IGBTs, specifically designed for automotive applications like EV electric compressors and high-voltage heaters.
- These new automotive-grade 650 V IGBTs feature a low typical collector-emitter saturation voltage (VCE(sat)) of 1.55 V, reducing conduction losses and improving system efficiency.
- The devices boast a 7 µs short-circuit withstand time at 25°C, ensuring robust overcurrent protection crucial for vehicle reliability.
- Meeting the stringent AEC-Q101 automotive reliability standard, the IGBTs are also suitable for industrial equipment inverters.
- ROHM’s strategic focus places these silicon IGBTs in auxiliary EV systems, complementing SiC adoption in higher-power traction applications.
- The initial product lineup includes 22 models in TO-247N packages and bare wafers, with plans for more packages like TO-247-4L and surface-mount options.
In a significant development for the electric vehicle (EV) market and industrial power electronics, ROHM Semiconductor has officially released its 4th-generation 650 V IGBTs. These new automotive-grade 650 V IGBTs are engineered to meet the demanding requirements of modern EV auxiliary systems, including electric compressors and high-voltage (HV) heaters, alongside a broad range of industrial inverter applications. The introduction marks a crucial step in enhancing the efficiency and reliability of power conversion within these critical systems.
The push for greater electrification across various sectors, particularly in the automotive industry, necessitates continuous advancements in power semiconductor technology. IGBTs (Insulated Gate Bipolar Transistors) remain fundamental components in this transition, offering a robust and cost-effective solution for managing high power levels. ROHM’s latest offering underscores the ongoing evolution of silicon-based power devices even as silicon carbide (SiC) gains traction in ultra-high-power domains.
Enhanced Efficiency Through Advanced Design
A cornerstone of ROHM’s new automotive-grade 650 V IGBTs is their optimized performance metrics. The devices feature a typical collector-emitter saturation voltage (VCE(sat)) of 1.55 V. This low VCE(sat) is a critical parameter, directly correlating with the amount of power dissipated as heat when the device is in its conductive state. A lower saturation voltage translates to reduced conduction losses, meaning less energy is wasted and less heat needs to be managed within the system.
ROHM states that the engineering teams meticulously redesigned the internal device structure. This comprehensive overhaul encompassed improvements in the manufacturing process and the edge termination technology. The objective was to achieve higher current density while simultaneously lowering both conduction and switching losses—a balance often challenging to strike in power semiconductor design.
Robust Protection and Reliability Standards
Beyond efficiency, the reliability and safety of power devices are paramount, especially in automotive applications. The new automotive-grade 650 V IGBTs boast a short-circuit withstand time of 7 µs at a junction temperature (Tj) of 25°C. This characteristic is vital for protecting the device and the overall system from potentially damaging overcurrent events.
Traditionally, there has been an inherent trade-off between achieving lower power losses and maintaining a robust short-circuit tolerance. However, ROHM affirms that the 7 µs withstand time engineered into these IGBTs provides sufficient margin for inverter and heater circuits to detect and interrupt an overcurrent condition effectively before any permanent damage occurs to the power device. This capability significantly enhances the operational safety and longevity of the systems in which they are deployed.
Furthermore, these IGBTs have met the rigorous AEC-Q101 automotive reliability standard. This certification is a testament to their robustness and suitability for the harsh environmental conditions encountered in automotive electronics, including extreme temperatures, vibrations, and electrical stresses. Compliance with AEC-Q101 signals to manufacturers that these components are qualified for use in safety-critical vehicle systems, building trust and ensuring performance under demanding operational scenarios.
Targeted Applications in Electric Vehicles and Industry
The strategic application focus for these automotive-grade 650 V IGBTs centers on vital auxiliary systems within electric vehicles. Electric compressors, crucial for EV air conditioning and thermal management, and high-voltage heaters—both PTC (Positive Temperature Coefficient) and coolant types—are key beneficiaries. As EVs proliferate, efficient thermal management becomes increasingly important for battery longevity, passenger comfort, and overall system performance, making robust and efficient power devices indispensable.
While silicon carbide (SiC) is rapidly becoming the material of choice for high-power applications such as traction inverters, ROHM emphasizes the continued relevance and widespread adoption of 650 V IGBTs in lower-power auxiliary systems. These silicon-based devices offer a cost-effective and proven solution where their performance characteristics align perfectly with system requirements. Beyond the automotive sphere, the new IGBTs also find wide utility in industrial equipment, particularly in motor drive inverters and compressors, where their efficiency and reliability offer tangible benefits.
Expanding Product Lineup and Future Outlook
ROHM has initiated the release with a substantial portfolio of products. The initial lineup includes 12 distinct models housed in the TO-247N package, encompassing both the RGAxxTS65HR and RGAxxTS65EHR series. In addition, 10 bare wafer products, designated as the SG83xxWN series, are available, offering flexibility for manufacturers who prefer integrated solutions or custom packaging.
Looking ahead, ROHM is actively developing an additional 12-product series in the TO-247-4L package, indicating a commitment to diversifying its offerings to meet varied design needs. The company also has plans to introduce surface-mount IGBTs in TO-263L and top-side cooling packages. This forward-looking approach ensures that ROHM continues to provide a comprehensive range of power solutions that cater to the evolving demands of the automotive and industrial sectors.
The continuous innovation in silicon-based power semiconductors like these automotive-grade 650 V IGBTs underscores their enduring importance alongside emerging technologies like SiC. By focusing on critical performance parameters such as lower VCE(sat) and enhanced short-circuit withstand time, while adhering to stringent automotive reliability standards, ROHM is contributing to the development of more efficient, reliable, and safer electric vehicles and industrial systems worldwide.
Frequently Asked Questions (FAQ)
What are ROHM’s 4th-generation 650 V IGBTs primarily designed for?
ROHM’s 4th-generation 650 V IGBTs are specifically designed for automotive-grade applications, including electric compressors and high-voltage heaters in electric vehicles (EVs), as well as various industrial equipment inverters.
What is VCE(sat) and why is its low value important for these IGBTs?
VCE(sat) stands for collector-emitter saturation voltage. A lower VCE(sat), such as the 1.55 V featured, is critical because it directly reduces conduction losses in the device, leading to less power dissipation and higher energy efficiency in the application.
How do these IGBTs ensure reliability in automotive applications?
The IGBTs meet the stringent AEC-Q101 automotive reliability standard, indicating their capability to perform robustly under the harsh conditions typically found in vehicle environments, including temperature extremes, vibrations, and electrical stresses.
What is the significance of the 7 µs short-circuit withstand time?
A 7 µs short-circuit withstand time provides a crucial safety margin. It allows inverter and heater circuits sufficient time to detect and interrupt an overcurrent condition before the power device can be damaged, thus enhancing system reliability and safety.
How do these silicon IGBTs fit into a market increasingly adopting SiC?
While SiC is growing in high-power applications like EV traction inverters, these 650 V silicon IGBTs remain vital for lower-power auxiliary systems such as EV compressors and heaters, offering a cost-effective and proven solution for these specific requirements.
What types of packages are available for these new IGBTs?
Initially, ROHM is offering 12 products in the TO-247N package and 10 bare wafer products. Future plans include a 12-product series in the TO-247-4L package and additional surface-mount IGBTs in TO-263L and top-side cooling packages.